ace 5801 p - channel power mosfet ver 1. 2 1 d escription the ace5801 uses advanced trench technology to provide excellent r ds( on ) , low gate charge and operation with low gate voltage. . this device is suitable for use as a load switching application and a wide variety of other applications. feature s ? advanced trench mosfet process technology ? ultra low on - resistance with low gate charge applications ? pwm application ? load switch ? battery charge in cellular handset absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds s - 12 v gat e - source voltage v gs s 8 v drain current - continuous i d - 16 a drain current - pulsed (note 1) i dm - 65 power dissipation (note 2, t a =25 ) p d 2.5 w maximum power dissipation (note 3, t c =25 ) 18 thermal resistance from junction to ambient (note 4) r ja 5 0 /w thermal resistance from junction to case (note 4) r jc 6.9 junction temperature t j 150 storage temperature t stg - 55~150 packaging type dfnwb2*2 - 6l
ace 5801 p - channel power mosfet ver 1. 2 2 ordering i nformation ace 5 801 xx + h electrical characteristics (t a =2 5 o c un less otherwise noted) parameter symbol conditions min. typ. max. unit off characteristics drain - source breakdown voltage v (br)dss v gs =0v, i d = - 250ua - 12 v zero gate voltage drain current i d ss v ds = - 12 v, v gs =0v - 1 ua gate - body leakage current i gss v gs = 8 v, v ds =0v 100 na on characteristics (note 5) drain - source on - state resistance r ds(on) v gs = - 4.5v, i d = - 6.7 a 21 m v gs = - 2.5 v, i d = - 6.2a 27 gate threshold voltage v gs(th) v ds =v gs , i d = - 250ua - 0.4 - 0.7 - 1 v forward transconductance g fs v ds = - 10 v, i d = - 6.7 a 40 s dynamic characteristics (note 6) input capacitance c iss v ds = - 10 v, v gs =0v f =1 mhz 2700 pf output ca pacitance c oss 680 reverse transfer capacitance c rss 590 total gate charge q g v ds = - 6 v, v gs = - 8v, i d = - 10a 60 100 nc v ds = - 6 v, v gs = - 4.5v, i d = - 10a 35 48 gate - source charge q gs 5 gate - drain charge q gd 10 drain - source diode characterist ics diode forward current (note 5) i s - 16 a diode forward voltage (note 4) v sd i s = - 1.6a,v gs =0v - 0.5 - 1.2 v note: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. this test is performed with no heat sink at ta=25 . 3. this test is performed with infinite heat sink at tc=25 . 4. surface mounted on fr4 board, t10s. 5. pulse test: pulse with 300s,duty cycle2%. 6. guaranteed by design, not subject to production testing. ln : dfnwb2*2 - 6l pb - free halogen - free
ace 5801 p - channel power mosfet ver 1. 2 3 typical performance characteristics
ace 5801 p - channel power mosfet ver 1. 2 4 packing information dfnwb2*2 - 6l
ace 5801 p - channel power mosfet ver 1. 2 5 notes ace does not assume any responsibility for use as critical compon ents in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the label ing, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or s ystem, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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